Datta 1989 electron wave analog spin fet
WebIdeea: Datta andDas Transistor S. Datta and B. Das (1990) „Electronic analog of the electro‐optic modulator" Applied Physics Letters 56 (7): 665–667. (1990) Gate potential controls the source‐drain current Used as modulator, amplifier, switch (1) Source anddrain= FM materials Conductonchannel= 2DEG WebJul 12, 2005 · where m * and m 0 are the electron's effective and real mass, respectively, g * is the effective Lande factor, σ = + 1/−1 for spin up/down electrons, p x and p y the electron momentum in the x and y directions, respectively. Conduction across the 2DEG is dominated by electrons in the vicinity of the Fermi circle, with k x and k y denoting the in …
Datta 1989 electron wave analog spin fet
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WebJan 25, 2024 · This review describes an emerging field of electronics devices; electron spin exploitation use for a further degree of freedom incorporation to charge state, with the … WebThe spin transistor comes about as a result of research on the ability of electrons (and other fermions) to naturally exhibit one of two (and only two) states of spin: known as "spin …
WebIn 2024 IEEE International Electron Devices Meeting, IEDM 2024 (pp. 6.2.1-6.2.4). (Technical Digest - International Electron Devices Meeting, IEDM). ... PY, Zhang, J, … WebDec 17, 2014 · In Ref. 4, Datta and Das pointed out that, in order to perform the spin-FET, one of the essential requirements is the central conducting channel within a mesoscopic phase-coherent regime.
WebOct 8, 2012 · An analog of the Datta-Das spin field-effect transistor (FET) is investigated, which is all graphene and based on the valley degree of freedom of electrons/holes. The ``valley FET'' envisioned consists of a quantum wire of gapped graphene (channel) sandwiched between two armchair graphene nanoribbons (source and drain), with the … WebIn the original proposal for the Datta-and-Das spin tran-sistor [11], the semiclassical model was used. Within this approach, the spin-orbit interaction was treated as an effective …
WebThe Datta-Das spin-field-effect transistor spin-FET ,1 stimulating plenty of theoretical and experimental works in semiconductor spintronics,2 has not yet been realized. Con-cluded difficulties are basically:3 i effective controllability of the Rashba spin-orbit4 SO coupling strength , ii long spin-relaxation time in two-dimensional electron ...
WebDec 1, 2024 · Several research groups have worked on the usage of multi-gate and multifunctional logic using spin-FET devices. In this paper, a review of the development of spin-FETs and spin-FET based design has been performed. In addition, the various applications of spin-FETs and the challenges faced for the implementation of spin-FETs … orconWebThe electron wave analog of the electro-optic modulator proposed by Datta and Das is ... The first working spin-FET prototype based on InAs ... conductance as a function of the applied voltage as was originally predicted by Datta and Das 2. Efficient spin injection and long spin diffusion length in the channel are the two major orcon 13264WebThe electron wave analog of the electro-optic modulator proposed by Datta and Das is ... The first working spin-FET prototype based on InAs ... conductance as a function of the … orcon f 600 mlWebAug 2, 1999 · Note that Datta and. ... sion as in the case of the spin FET. The origin of the phase. ... We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the ... orcon insulationWeba quantum computing [1]. A seminal concept of spin-field effect transistor (spin-FET) has been proposed by Datta and Das [2] in the light of controllability of spin precession motion of electron through the Rashba spin orbit coupling effect [3]. It is currently common belief that the Datta-Das type spin-FET can operate only in regime of ballistic orcon action knife plusWebJun 4, 1998 · We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the … iracing sound level settingsWebNov 22, 2006 · A Datta-Das spin field effect transistor (FET) made of a nonballistic quantum wire with a single transport channel is considered. Although there is no spin relaxation and the spin precession is not influenced by elastic scattering, successful spin FET operation can still be prevented by the conductance fluctuations. orcon calling packs